Taiwan Semiconductor TSM3481CX6 P沟道30V P沟道MOSFET

Fall Time: 7.35 ns

Rise Time: 4.43 ns

Technology: Si

Unit Weight: 15 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 18.09 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.6 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 20.52 ns

Typical Turn-Off Delay Time: 42.81 ns

Id - Continuous Drain Current: 5.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 12 S

Rds On - Drain-Source Resistance: 38 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V