Taiwan Semiconductor TSM4925DCS P沟道双30V P沟道MOSFET

Fall Time: 70 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 83 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 33 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 110 ns

Id - Continuous Drain Current: 7.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 24 S

Rds On - Drain-Source Resistance: 20 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V