Taiwan Semiconductor TSM600P03CS RLG MOSFETs -30V，-4.7A，单P沟道功率MOSFET

Fall Time: 6.9 ns

Rise Time: 10.8 ns

Technology: Si

Unit Weight: 83 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 5.1 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2.1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3.4 ns

Typical Turn-Off Delay Time: 26.9 ns

Id - Continuous Drain Current: 4.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3.5 S

Rds On - Drain-Source Resistance: 44 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V