Taiwan Semiconductor TSM60NE069PW C0G MOSFETs 600V，51A，单通道N沟高压

Fall Time: 37 ns

Rise Time: 66 ns

Technology: Si

Unit Weight: 6.250 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 86 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 417 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 49 ns

Typical Turn-Off Delay Time: 80 ns

Id - Continuous Drain Current: 51 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 69 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 6 V