Taiwan Semiconductor TSM6502CR RLG MOSFETs 60V，24A，-60V，-18A，互补N沟道和P沟道功率MOSFET

Fall Time: 18 ns, 44 ns

Rise Time: 25 ns, 28 ns

Technology: Si

Unit Weight: 372.608 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 20.8 nC, 9.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 40 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 7.4 ns, 4 ns

Typical Turn-Off Delay Time: 18 ns, 44 ns

Id - Continuous Drain Current: 5.4 A, 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 28 mOhms, 73 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V