Taiwan Semiconductor TSM6963SDCA RVG MOSFETs -20V，-4.5A，双P沟道功率MOSFET

Fall Time: 42 ns

Rise Time: 13 ns

Technology: Si

Unit Weight: 158 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 14 nC

Moisture Sensitive: Yes

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.14 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 86 ns

Id - Continuous Drain Current: 4.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 16 S

Rds On - Drain-Source Resistance: 23 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 500 mV