Taiwan Semiconductor TSM8568CS RLG MOSFETs 30V，15A，-30V，13A，互补N沟道和P沟道功率MOSFET

Technology: Si

Unit Weight: 83 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 14 nC, 21.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 6 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V, - 25 V, + 25 V

Id - Continuous Drain Current: 15 A, 13 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 16 mOhms, 37 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V, 2.5 V