Teledyne e2v TDG650E60TEPF GAN 3 GaNPX /顶侧，650V 增强型 GaN 晶体管，60A，25 欧姆

Transistor Mounting: Surface Mount

Typical Gate Charge: 14.2

Transistor Case Style: DIE

Drain Source Voltage Vds: 650

Continuous Drain Current Id: 60

Drain Source On State Resistance: 60

Datasheet