Texas Instruments ADS6149IRGZT 带DDR低功耗14位ADC A 595-ADS6149IRGZR
Width: 7 mm
Height: 0.9 mm
Length: 7 mm
Features: High Performance
Shutdown: No Shutdown
Gain Error: 0.2 %/FSR
Input Type: Differential
Resolution: 14 bit
Output Type: CMOS, LVDS
Unit Weight: 138 mg
Architecture: Pipeline
Sampling Rate: 250 MS/s
Interface Type: Parallel CMOS, Parallel LVDS
Mounting Style: SMD/SMT
Reference Type: External, Internal
Power Consumption: 687 mW
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Number of Converters: 1 Converter
Supply Voltage - Max: 1.9 V, 3.6 V
Supply Voltage - Min: 1.7 V, 3 V
Analog Supply Voltage: 3.3 V
Digital Supply Voltage: 1.8 V
Pd - Power Dissipation: 687 mW
Operating Supply Voltage: 1.7 V to 1.9 V, 3 V to 3.6 V
INL - Integral Nonlinearity: 2 LSB
SNR - Signal to Noise Ratio: 69 dB
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
DNL - Differential Nonlinearity: 0.4 LSB
ENOB - Effective Number of Bits: 11.4 bit
THD - Total Harmonic Distortion: 73 dBc
SFDR - Spurious Free Dynamic Range: 76 dBc
SINAD - Signal to Noise and Distortion Ratio: 68 dB
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