Texas Instruments CSD13202Q2 MOSFETs N沟道功率MOSFET 12 V 9.3毫欧

Width: 2 mm

Height: 0.75 mm

Length: 2 mm

Fall Time: 13.6 ns

Rise Time: 28 ns

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 5.1 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.7 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 4.5 ns

Typical Turn-Off Delay Time: 11 ns

Id - Continuous Drain Current: 14.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 44 S

Rds On - Drain-Source Resistance: 9.3 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 580 mV