Texas Instruments CSD13303W1015 MOSFETs N-CH NexFET 功率 MOSF ET

Width: 1 mm

Height: 0.625 mm

Length: 1.5 mm

Fall Time: 3.2 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 1.700 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 3.9 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.65 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 4.6 ns

Typical Turn-Off Delay Time: 14.7 ns

Id - Continuous Drain Current: 3.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 14 S

Rds On - Drain-Source Resistance: 20 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 850 mV