Texas Instruments CSD13306WT MOSFETs 12V N沟道 NexFET 功率 MOSFET A 595-CSD13306W

Width: 1 mm

Height: 0.62 mm

Length: 1.5 mm

Fall Time: 8 ns

Rise Time: 11 ns

Technology: Si

Unit Weight: 1.700 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 11.2 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.9 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 7 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 3.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 15 S

Rds On - Drain-Source Resistance: 10.2 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 700 mV