Texas Instruments CSD13380F3T MOSFETs 12伏N沟道NexF ET功率MOSFET si A 595-CSD13380F3

Width: 0.64 mm

Height: 0.35 mm

Length: 0.73 mm

Fall Time: 3 ns

Rise Time: 4 ns

Technology: Si

Unit Weight: 0.300 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 1.2 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.4 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 4 ns

Typical Turn-Off Delay Time: 11 ns

Id - Continuous Drain Current: 3.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 4.3 S

Rds On - Drain-Source Resistance: 76 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 550 mV