Texas Instruments CSD13383F4 MOSFETs CSD13383F4 12-V N沟MOSFET 3-PICOSTAR A 595-CSD13383F4T

Width: 0.64 mm

Height: 0.35 mm

Length: 1 mm

Technology: Si

Unit Weight: 0.400 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 2.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Id - Continuous Drain Current: 2.9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 44 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 700 mV