Texas Instruments CSD13385F5 MOSFETs 12伏N沟道NexF ET功率MOSFET si A 595-CSD13385F5T

Width: 0.77 mm

Height: 0.35 mm

Length: 1.53 mm

Fall Time: 10 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 0.700 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.4 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 7 ns

Typical Turn-Off Delay Time: 33 ns

Id - Continuous Drain Current: 7.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 11.3 S

Rds On - Drain-Source Resistance: 19 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 500 mV