Texas Instruments CSD16322Q5 N沟道NexFET功率MOSFET

Width: 5 mm

Height: 1 mm

Length: 6 mm

Fall Time: 3.7 ns

Rise Time: 10.7 ns

Technology: Si

Unit Weight: 110.300 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 6.8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3.1 W

Vgs - Gate-Source Voltage: - 8 V, + 10 V

Typical Turn-On Delay Time: 6.1 ns

Typical Turn-Off Delay Time: 12.3 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 106 S

Rds On - Drain-Source Resistance: 5.8 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V