Texas Instruments CSD17308Q3T MOSFETs 30-V N沟道 NexF ET 功率MOSFET si A 595-CSD17308Q3

Width: 3.3 mm

Height: 1 mm

Length: 3.3 mm

Fall Time: 2.3 ns

Rise Time: 5.7 ns

Technology: Si

Unit Weight: 38.700 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 3.9 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 28 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V, - 8 V, + 8 V

Typical Turn-On Delay Time: 4.5 ns

Typical Turn-Off Delay Time: 9.9 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 37 S

Rds On - Drain-Source Resistance: 11.8 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V