Texas Instruments CSD17309Q3 功率MOSFET 30V N沟道NexFET功率MOSFET

Width: 3.3 mm

Height: 1 mm

Length: 3.3 mm

Fall Time: 3.6 ns

Rise Time: 9.9 ns

Technology: Si

Unit Weight: 44.500 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: DLPDLCR4710EVM-G2, TPS65982-EVM, TPS65983EVM

Transistor Type: 1 N-Channel

Qg - Gate Charge: 7.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.8 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 6.1 ns

Typical Turn-Off Delay Time: 13.2 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 67 S

Rds On - Drain-Source Resistance: 5.4 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V