Texas Instruments CSD17312Q5 MOSFETs 30V N沟道 NexFET 功率MOSFET

Width: 5 mm

Height: 1 mm

Length: 6 mm

Technology: Si

Unit Weight: 250 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 28 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3.2 W

Vgs - Gate-Source Voltage: - 8 V, + 10 V

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 200 S

Rds On - Drain-Source Resistance: 1.7 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V