Texas Instruments CSD17382F4 MOSFETs 30-V N沟道 NexF ET 功率MOSFET sin A 595-CSD17382F4T

Width: 0.64 mm

Height: 0.35 mm

Length: 1 mm

Fall Time: 270 ns

Rise Time: 111 ns

Technology: Si

Unit Weight: 0.700 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 2.1 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 59 ns

Typical Turn-Off Delay Time: 279 ns

Id - Continuous Drain Current: 2.3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 5.9 S

Rds On - Drain-Source Resistance: 67 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 700 mV