Texas Instruments CSD18537NQ5A MOSFETs 60V N沟道 NexFET 功率MOSFET A 595-CSD18537NQ5AT

Width: 4.9 mm

Height: 1 mm

Length: 6 mm

Fall Time: 3.2 ns

Rise Time: 4 ns

Technology: Si

Unit Weight: 84.300 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 14 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3.2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5.8 ns

Typical Turn-Off Delay Time: 14.4 ns

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 62 S

Rds On - Drain-Source Resistance: 13 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 3 V