Texas Instruments CSD18541F5 MOSFETs 60-V N沟道 NexF ET 功率MOSFET sin A 595-CSD18541F5T

Width: 0.77 mm

Height: 0.35 mm

Length: 1.53 mm

Fall Time: 496 ns

Rise Time: 540 ns

Technology: Si

Unit Weight: 0.700 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 11 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 572 ns

Typical Turn-Off Delay Time: 1076 ns

Id - Continuous Drain Current: 2.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 65 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.75 V