Texas Instruments CSD18542KTT MOSFETs 60-V N沟道 NexF ET 功率MOSFET si A 595-CSD18542KTTT

Width: 10.26 mm

Height: 19.7 mm

Length: 9.25 mm

Fall Time: 2 ns

Rise Time: 4 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 44 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 16 ns

Id - Continuous Drain Current: 200 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 198 S

Rds On - Drain-Source Resistance: 4 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V