Texas Instruments CSD19532Q5BT MOSFETs 100-V N沟道 Nex FET 功率MOSFETs A 595-CSD19532Q5B

Width: 5 mm

Height: 1 mm

Length: 6 mm

Fall Time: 6 ns

Rise Time: 6 ns

Technology: Si

Unit Weight: 105.300 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 48 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3.1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 7 ns

Typical Turn-Off Delay Time: 22 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 84 S

Rds On - Drain-Source Resistance: 4.9 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.6 V