Texas Instruments CSD19535KTT MOSFETs 100-V N沟道 Nex FET 功率MOSFETs A 595-CSD19535KTTT

Width: 10.26 mm

Height: 4.7 mm

Length: 9.25 mm

Fall Time: 15 ns

Rise Time: 18 ns

Technology: Si

Unit Weight: 2.200 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 75 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 21 ns

Id - Continuous Drain Current: 197 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 301 S

Rds On - Drain-Source Resistance: 3.4 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.2 V