Texas Instruments CSD19536KTT MOSFETs 100伏N沟道Nex FET功率MOSFETs A 595-CSD19536KTTT

Width: 10.26 mm

Height: 4.7 mm

Length: 9.25 mm

Fall Time: 6 ns

Rise Time: 8 ns

Technology: Si

Unit Weight: 2.200 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 118 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 375 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 32 ns

Id - Continuous Drain Current: 272 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 329 S

Rds On - Drain-Source Resistance: 2.4 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V