Texas Instruments CSD19538Q3AT MOSFETs 100-V N沟道 Nex FET 功率MOSFETs A 595-CSD19538Q3A

Width: 3 mm

Height: 0.9 mm

Length: 3.15 mm

Fall Time: 2 ns

Rise Time: 3 ns

Technology: Si

Unit Weight: 27.300 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 4.3 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.8 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 7 ns

Id - Continuous Drain Current: 15 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 61 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 3.2 V