Texas Instruments CSD22204W MOSFETs -8V P沟道 NexFE T功率MOSFET 单个 A 595-CSD22204WT

Width: 1.5 mm

Height: 0.62 mm

Length: 1.5 mm

Technology: Si

Unit Weight: 2.500 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 24.6 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.7 W

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 14 mOhms

Vds - Drain-Source Breakdown Voltage: 8 V

Vgs th - Gate-Source Threshold Voltage: 950 mV