Texas Instruments CSD23381F4T MOSFETs 12V P型 FemtoFET MO SFET A 595-CSD23381F4

Width: 0.64 mm

Height: 0.35 mm

Length: 1 mm

Fall Time: 7 ns

Rise Time: 3.9 ns

Technology: Si

Unit Weight: 0.400 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 1.14 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 4.5 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 2.3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2 S

Rds On - Drain-Source Resistance: 970 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 950 mV