Texas Instruments CSD25481F4 MOSFETs P型功率MOSFET 20V 90毫欧 A 595-CSD25481F4T

Width: 0.64 mm

Height: 0.35 mm

Length: 1 mm

Fall Time: 6.7 ns

Rise Time: 3.6 ns

Technology: Si

Unit Weight: 0.400 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 913 pC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 4.1 ns

Typical Turn-Off Delay Time: 16.9 ns

Id - Continuous Drain Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3.3 S

Rds On - Drain-Source Resistance: 800 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 950 mV