Texas Instruments CSD75207W15 MOSFET 双P沟道 NexFET 功率MOSFET

Width: 1.5 mm

Height: 0.62 mm

Length: 1.5 mm

Fall Time: 16 ns

Rise Time: 8.6 ns

Technology: Si

Unit Weight: 2.500 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 2.9 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 700 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 12.8 ns

Typical Turn-Off Delay Time: 32.1 ns

Id - Continuous Drain Current: 3.9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 6.2 S

Rds On - Drain-Source Resistance: 54 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 600 mV