Texas Instruments CSD75208W1015T MOSFETs 20V PCH NexFET 功率 MOSFET A 595-CSD75208W1015

Width: 1 mm

Height: 0.625 mm

Length: 1.5 mm

Fall Time: 11 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 1.700 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 1.9 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 750 mW

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 29 ns

Id - Continuous Drain Current: 1.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 150 mOhms, 285 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 800 mV