Texas Instruments CSD83325LT 功率MOSFET 12伏N沟道NexFET功率MOSFET du A 595-CSD83325L

Width: 1.15 mm

Height: 0.2 mm

Length: 2.2 mm

Fall Time: 589 ns

Rise Time: 353 ns

Technology: Si

Unit Weight: 1.500 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 8.4 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.3 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 205 ns

Typical Turn-Off Delay Time: 711 ns

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 36 S

Rds On - Drain-Source Resistance: 5.9 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 950 mV