Texas Instruments CSD85301Q2 MOSFETs CSD85301Q2 双N沟道功率MOSFET A 595-CSD85301Q2T

Width: 2 mm

Height: 0.75 mm

Length: 2 mm

Fall Time: 15 ns, 15 ns

Rise Time: 26 ns, 26 ns

Technology: Si

Unit Weight: 9.700 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 5.4 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.3 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 6 ns, 6 ns

Typical Turn-Off Delay Time: 14 ns, 14 ns

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 20 S, 20 S

Rds On - Drain-Source Resistance: 27 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 600 mV