Texas Instruments CSD86311W1723 MOSFET 双N沟道 Nex F ET 功率MOSFET

Width: 1.74 mm

Height: 0.62 mm

Length: 2.32 mm

Fall Time: 2.9 ns

Rise Time: 4.3 ns

Technology: Si

Unit Weight: 4.100 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 3.1 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 8 V, + 10 V

Typical Turn-On Delay Time: 5.4 ns

Typical Turn-Off Delay Time: 13.2 ns

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 6.4 S

Rds On - Drain-Source Resistance: 42 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 1 V