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Width: 3.3 mm
Height: 1.5 mm
Length: 3.3 mm
Fall Time: 1.9 ns, 4.2 ns
Rise Time: 7.5 ns, 6.3 ns
Technology: Si
Unit Weight: 64 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Development Kit: CSD86330EVM-717, TPS40322EVM-679
Transistor Type: 2 N-Channel
Qg - Gate Charge: 6.2 nC, 12 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 6 W
Vgs - Gate-Source Voltage: - 5 V, + 5 V
Typical Turn-On Delay Time: 4.9 ns, 5.3 ns
Typical Turn-Off Delay Time: 8.5 ns, 15.8 ns
Id - Continuous Drain Current: 4.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 52 S, 82 S
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 2.1 V, 1.6 V
