Texas Instruments CSD86350Q5DT MOSFETs 25-V N沟道同步降压NexFET

Fall Time: 2.3 ns, 21 ns

Rise Time: 21 ns, 23 ns

Technology: Si

Unit Weight: 150.400 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 10.7 nC, 25 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 13 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 8 ns, 9 ns

Typical Turn-Off Delay Time: 9 ns, 24 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 103 S, 132 S

Rds On - Drain-Source Resistance: 5 mOhms, 1.1 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 900 mV