Texas Instruments CSD86356Q5DT MOSFETs 25伏N沟道同步降压NexFET A 595-CSD86356Q5D

Fall Time: 3 ns

Rise Time: 26 ns

Technology: Si

Unit Weight: 119 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: PowerBlock

Qg - Gate Charge: 7.9 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 12 W

Vgs - Gate-Source Voltage: - 8 V, + 10 V

Typical Turn-On Delay Time: 7 ns

Typical Turn-Off Delay Time: 12 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 70 S

Rds On - Drain-Source Resistance: 4.5 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 950 mV