Texas Instruments CSD87312Q3E MOSFET 双通道 30V N沟 NexFET 功率

Width: 3.3 mm

Height: 1 mm

Length: 3.3 mm

Fall Time: 2.9 ns

Rise Time: 16 ns

Technology: Si

Unit Weight: 31.200 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 6.3 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 7.8 ns

Typical Turn-Off Delay Time: 17 ns

Id - Continuous Drain Current: 27 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 39 S

Rds On - Drain-Source Resistance: 33 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 800 mV