Texas Instruments CSD87313DMS MOSFETs 30-V N沟道 NexF ET 功率MOSFET du A 595-CSD87313DMST

Fall Time: 13 ns, 13 ns

Rise Time: 27 ns, 27 ns

Technology: Si

Unit Weight: 5.500 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 28 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.7 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 9 ns, 9 ns

Typical Turn-Off Delay Time: 41 ns, 41 ns

Id - Continuous Drain Current: 17 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 149 S, 149 S

Rds On - Drain-Source Resistance: 5.5 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 600 mV