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Fall Time: 13 ns, 13 ns
Rise Time: 27 ns, 27 ns
Technology: Si
Unit Weight: 5.500 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 28 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.7 W
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 9 ns, 9 ns
Typical Turn-Off Delay Time: 41 ns, 41 ns
Id - Continuous Drain Current: 17 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 149 S, 149 S
Rds On - Drain-Source Resistance: 5.5 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 600 mV
