Texas Instruments CSD87334Q3D MOSFETs 30-V N沟道同步降压NexFET A 595-CSD87334Q3DT

Width: 3.3 mm

Height: 1 mm

Length: 3.3 mm

Fall Time: 17 ns, 17 ns

Rise Time: 7 ns, 7 ns

Technology: Si

Unit Weight: 76 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-channel

Qg - Gate Charge: 8.3 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 6 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 4 ns, 4 ns

Typical Turn-Off Delay Time: 11 ns, 11 ns

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 8.3 mOhms, 8.3 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 750 mV