Texas Instruments CSD87351ZQ5D 同步降压MOSFET驱动器 同步降压NexFET电源模块

Width: 5 mm

Height: 1.5 mm

Length: 6 mm

Fall Time: 4.2 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 161.300 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 7.7 nC, 22 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 12 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 32 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V, 750 mV