Texas Instruments CSD87384M 同步降压 NexFET 电源级 同步降压电源模块 k II A 595-CSD87384MT

Width: 3.5 mm

Height: 0.45 mm

Length: 5 mm

Fall Time: 7.6 ns, 8.2 ns

Rise Time: 56 ns, 49 ns

Technology: Si

Unit Weight: 71.600 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Development Kit: CSD87384MEVM-603

Transistor Type: 2 N-Channel

Qg - Gate Charge: 7.1 nC, 31 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 8 W

Vgs - Gate-Source Voltage: - 8 V, + 10 V

Typical Turn-On Delay Time: 8.7 ns, 17.5 ns

Typical Turn-Off Delay Time: 14 ns, 29 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 67 S, 240 S

Rds On - Drain-Source Resistance: 6.4 mOhms, 1.95 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V