Texas Instruments CSD87501LT MOSFETs 30V 双N沟道共漏 NexFET A 595-CSD87501L

Width: 1.47 mm

Height: 0.2 mm

Length: 3.37 mm

Fall Time: 712 ns

Rise Time: 260 ns

Technology: Si

Unit Weight: 3.100 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 15 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 164 ns

Typical Turn-Off Delay Time: 709 ns

Id - Continuous Drain Current: 14 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4.6 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V