Texas Instruments CSD88599Q5DC MOSFETs 60-V N沟道同步降压 NexFET A 595-CSD88599Q5DCT

Fall Time: 3 ns

Rise Time: 20 ns

Technology: Si

Unit Weight: 100.600 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 43 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 12 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 23 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.7 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.4 V