Texas Instruments TPS1100D MOSFET MOSFET 10ns RT A 595-TPS1100DR

Width: 3.9 mm

Height: 1.75 mm

Length: 4.9 mm

Fall Time: 10 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 74 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 5.45 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 791 mW

Vgs - Gate-Source Voltage: - 15 V, + 2 V

Typical Turn-On Delay Time: 4.5 ns

Typical Turn-Off Delay Time: 13 ns

Id - Continuous Drain Current: 1.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 2.5 S

Rds On - Drain-Source Resistance: 180 mOhms

Vds - Drain-Source Breakdown Voltage: 15 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V