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Key Specifications(a)
Detector Type: UV-Enhanced Silicon APD
Wavelength Range: 200 - 1000 nm
Output Bandwidth (3 dB)(b): DC - 400 MHz
Active Area Diameter: 0.2 mm
Typical Max Responsivity: 50 A/W @ M = 100(c)
Transimpedance Gain: 5 kV/A (50 Ω) 10 kV/A (High-Z)
Max Conversion Gain(e): 5.0 × 10^5 V/W
M Factor Adjustment Range: 10 - 100 (Continuous)
M Factor Temperature Stability(f): ±2% (Typical); ±3% (Max)
Saturation Power (CW): 8.0 µW @ M = 100(c) 80 µW @ M = 10
Minimum NEP(g): 0.15 pW/√Hz
Dimensions (H x Wx D): 2.97" x 2.20" x 1.09"
(a) For a complete list of specifications and responsivity graphs, please see the manual. Data are valid at 23 ± 5 °C and 45% ± 15% relative humidity (non-condensing).
(b) At Maximum Gain Setting
(c) At 600 nm
(d) At 800 nm
(e) At the Peak Responsivity Wavelength
(f) Within the 23 ± 5 °C temperature range.
(g) For more information on how NEP is calculated, please see Thorlabs' Noise Equivalent Power White Paper.
