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Detector Type: Si/PIN
Wavelength Range: 320 - 1000 nm
Typical Maximum Responsivity: 0.53 A/W @ 820 nm
Active Detector Diameter: 0.8 mm
Bandwidth (3 dB): DC - 100 MHz
Common Mode Rejection Ratio: >30 dB 35 dB (Typical)
Transimpedance Gain: High Z Load: 50 x 10^3 V/A 50 Ω Load: 24.5 x 10^3 V/A
Conversion Gain RF-Output: 26.5 x 10^3 @ 820 nm
CW Saturation Power RF-Output: 150 µW @ 820 nm
Voltage Swing RF-Output: High Z Load: ±4.0 V 50 Ω Load: ±1.9 V
Conversion Gain Monitor Outputs: High Z Load: 10 V/mW @ 820 nm
Voltage Swing Monitor Outputs (Max): High Z Load: 10 V 50 Ω Load: 1.55 V (Max)
Minimum NEP: 12 pW/√Hz (DC - 100 MHz)
Optical Inputs: Free Space
Photodiode Damage Threshold: 20 mW
Electrical Outputs: BNC, 50 Ω
RF-Output Coupling: DC (AC-Coupling Available upon Request)
Operating Temperature Range(a): 0 to 40 °C
Storage Temperature Range: -40 to 70 °C
Dimensionsb (W x H x L): 84.5 mm x 65.3 mm x 21.1 mm (3.33" x 2.57" x 0.83")
Weight: 0.2 kg (w/o Power Supply)
Included Power Supply(c): ±12 V @ 250 mA (100/120/230 VAC, 50 - 60 Hz, Switchable)
(a) Non-Condensing
(b) Without Connectors
(c) A replacement power supply is available below.
(d) All technical data are valid at 23 ± 5°C and 45 ± 15% relative humidity (non-condensing).
