Torex Semiconductor XP235N2001TR-G MOSFET通用型N沟道MOSFET，30V / 2A / SOT-23

Fall Time: 10 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 3.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 400 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 2 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 110 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V